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    Gate-Stack Engineering in n-Type Ultrascaled Si Nanowire Field-Effect Transistors

    Additional information

    Authors
    Luisier M., Schenk O.
    Type
    Journal Article
    Year
    2013
    Language
    English
    Journal
    IEEE Transactions on Electron Devices
    Start page number
    3325
    End page number
    3329
    Keywords
    field effect transistors;high-k dielectric thin films;leakage currents;nanowires;permittivity;silicon compounds;3D quantum transport solver;Si;SiO;conduction band offset;dielectric constant;effective mass approximation;gate leakage currents;gate stacks;gate-stack engineering;high-κ dielectrics;interfacial layer;size 0.5 nm to 0.6 nm;size 5 nm;ultrascaled nanowire field-effect transistors;Dielectrics;Effective mass;Field effect transistors;Leakage currents;Logic gates;Silicon;Device scaling;gate leakage;quantum transport simulation

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